We have studied the effects of pulsed laser irradiation on silicon implanted, thermally activated , Calcia Stabilized Zirconia (CSZ) capped GaAs substrates. Reference substrates have also been irradiated in air for comparison. CSZ as a solid electrolyte has been used to chemically reduce the GaAs surface native oxides prior to irradiation while maintaining the surface stoechiometry. Our results indicate a spectacular decrease in defect density after laser irradiation of the CSZ capped-native oxide free samples, as compared to the samples irradiated in air.